高純碲：99.999% Te-5N-L-1

檢測雜質：Ag, Al, Cd, Cu, Fe, Mg, Ni, Pb, Se, Sn, Si

雜質總含量：≤10ppm

高純碲：99.9999% Te-6N-L-2

檢測雜質：Ag, Al, Cd, Cu, Fe, Mg, Ni, Pb, Se, Zn, Ca

雜質總含量：≤1ppm

高純碲：99.99999% Te-7N-L-3

檢測雜質：Ag, Al, Cd, Cu, Fe, Mg, Ni, Pb, Se, Zn, Ca

雜質總含量：≤0.1ppm

用途：主要用于制備Ⅱ-Ⅵ族化合物半導體、熱點轉換元件、致冷元件、壓電晶體和紅外探測器，太陽能電池材料等。

包裝：滌綸薄膜包裝后雙層復合膜抽真空包裝兩次，{外套復合鋁箔內充氬氣封裝}或者直接玻璃管真空封裝。

Specification:

High purity Te: 99.999% Te-5N-L-1

Testing impurity: Ag, Al, Cd, Cu, Fe, Mg, Ni, Pb, Se, Sn, Si

Totalimpurity content: ≤10ppm

High purity Te: 99.9999% Te-6N-L-2

Testing impurity: Ag, Al, Cd, Cu, Fe, Mg, Ni, Pb, Se, Zn, Ca

Totalimpurity content: ≤1ppm

High purity Te: 99.99999% Te-7N-L-3

Testing impurity: Ag, Al, Cd, Cu, Fe, Mg, Ni, Pb, Se, Zn, Ca

Totalimpurity content: ≤0.1ppm

Application: Use for preparation Ⅱ-Ⅵ elementschemical compound semiconductor, thermo-electricity transfer cell,refrigerating cell, piezoelectric crystal and infrared detector. Used as thematerial of solar cell etc…

Package: Packed with terylene film, and doublepoly-film with vacuum encapsulation, do this twice, then packed with aluminumfoil with argon encapsulation, or packed with glass tube with vacuumencapsulation directly.