高純鎵：99.999% Ga-5N-I-4

     檢測雜質：Al, Ca, Cu, Fe, Hg, In, Mg, Ni, Pb,Sn, Zn, Si

     雜質總含量：≤10ppm

     高純鎵：99.9999% Ga-6N-I-5

     檢測雜質：Cr, Cu, Fe, Mg, Ni, Pb, Sn, Zn, Si

     雜質總含量：≤1ppm

     高純鎵：99.99999% Ga-7N-I-6

     檢測雜質：Cu, Fe, Mg, Mn, Pb, Sn, Zn, Si

    雜質總含量：≤0.1ppm

用途：主要用于制備Ⅲ-Ⅴ族化合物半導體（如GaAs、GaP等）、高純合金以及鍺、硅單晶摻雜劑。

包裝：聚乙烯塑料瓶包裝外套雙層復合膜抽真空封裝或直接玻璃管真空封裝。

Specification:

High purity Ga: 99.999% Ga-5N-I-4

 Testing impurity: Al, Ca, Cu, Fe,Hg, In, Mg, Ni, Pb, Sn, Zn, Si

Totalimpurity content: ≤10ppm

High purity Ga: 99.9999% Ga-6N-I-5

Testing impurity: Cr, Cu, Fe, Mg, Ni, Pb, Sn, Zn, Si

Totalimpurity content: ≤1ppm

Highpurity Ga: 99.99999% Ga-7N-I-6

Testingimpurity: Cu, Fe, Mg, Mn, Pb, Sn, Zn, Si

Totalimpurity content: ≤0.1ppm

Application: Used for preparation Ⅲ-Ⅴ elementschemical compound semiconductor, high purity metal and germanium, dopant ofmono-crystal silicon.

Package: Packed with polythene plasticbottle, and double poly-film with vacuum encapsulation. Packed with glass tubewith vacuum encapsulation directly.