Etching of metals which do not have volatile compounds such as Cu， Au cannot be accomplished in RIE systems. On the other hand， physical etching with accelerating Ar ions is possible. Typically surface is patterned with thick resist for masking， and the energetic ion flux during etching overheats the substrate and the resist. Unless efficient means of removing the heat is found resist becomes very difficult to remove.

We have demonstrated capability of keeping substrate temperature below 50 °C along with wafer rotation to achieve the desired uniformity which makes it possible to etch wafers with resist pattern.

Features

1. 不銹鋼方型離子束腔體 14.5" SS Cube ion beam chamber

2. 1000伏直流離子槍 12 cm DC Ion gun 1000V， 500 mA ，DC motor driven SS shutters

3. 離子束中和器 Ion Beam neutralizer

4. 質量流量控制的氬氣路 Ar MFC

5. 6"水冷基底卡盤 Chilled water cooled 6” substrate platen

6. 晶圓旋轉 Wafer rotation 3-10 RPM， Vacuum stepper motor

7. 晶圓傾斜 Wafer Tilt with a stepper motor through differentially pumped rotational seal

8. 樣品自動取放 Manual or Auto wafer load/unload

9. 刻蝕速度 Typical Etch Rates: 200A/min Cu， 500A/min Si

10. 刻蝕均勻性 +/-5% etch uniformity over 4“ area

11. 真空度 5x 10^-6 Torr < 20 minutes <2 x10^-7 Torr (2 days) Base Pressure with 500 l/sec turbo

12. 極限真空度 8x10^-8 Torr Base pressure with 1000 l/sec Turbo pump

13. 磁控濺射氮化硅保護金屬表面不被氧化 Magnetron Sputtering of Si₃N₄ to protect etched metal surfaces from oxidation

14. 計算機控制 PC Controlled with LabVIEW Software

15. 菜單驅動，密碼保護 Recipe Driven， Password Protected

16. 全安全互鎖 Fully Safety Interlocked